Ion-beam formation of a silver-containing surface of porous silicon

Abstract

The results of a study of the formation of a silver-containing porous layer on the surface of single-crystal silicon KEF-4,5 by ion-beam alloying are presented. A computer simulation of the process of ion doping of silicon with KEF-4,5, high-energy helium and silver ions was carried out using the TRIM/SRIM software package in order to determine the dose and energy neighborhoods of helium and silver ions necessary and sufficient in the experiment. The relief of the porous surface, the density of quasi-pores on the surface of implanted silicon, the elemental composition of the obtained porous composite silver-containing layers, taking into account the effect of intermediate heat treatment on it, are studied. The ion-beam formation of a silver-containing coating ensures the creation of a developed surface relief at the nanoscale with high reproducibility and controllability inherent in the ion doping method, which contributes to an increase in the yield of usable solar cell products. The technological modes of high reproducibility and controllability inherent in the ion doping method are determined based on the experimental data obtained for studying the relief of a porous surface and the density of quasi-pores on the surface of implanted silicon from the energy and dose of helium ions. Based on the study of the elemental composition of the quasi-porous composite silver-containing layer obtained by implantation of silver ions, the recommended parameters of implantation of silver ions have been established.