Structural and Electrical Properties of BaPrO3-δ Thin Film with Oxygen Vacancies

Shoto Furuichi, T. Tsuchiya, K. Horiba, Masaki Kobayashi, M. Minohara, H. Kumigashira, T. Higuchi
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Abstract

Shoto Furuichi1), Takashi Tsuchiya2), Koji Horiba3), Masaki Kobayashi3), Makoto Minohara3), Hiroshi Kumigashira3) and Tohru Higuchi1) 1) Department of Applied Physics, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan 2) International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan 3) Photon Factory, KEK, Tsukuba, Ibaraki 305-0801, Japan Fax: 81-3-5876-1401, e-mail: 1516628@ed.tus.ac.jp
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含氧空位的BaPrO3-δ薄膜的结构和电学性能
古一正人1),土屋隆2),堀bakoji 3),小林正明3),minohara Makoto 3), kumigashirahiroshi 3), higuchi Tohru 1) 1),东京理科大学应用物理系,东京125-8585;2)国际材料纳米结构中心,国立材料科学研究所(NIMS),日本,茨城305 -0044;3)光子工厂,日本,茨城305 -0801;传真:81-3-5876-1401,电子邮件:1516628@ed.tus.ac.jp
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