Pre-fabricated High-density TSV Interposer for Programmable IC Applications

Abstract

The through-silicon-via interposer is recommended to enable 3D integrated circuit integration. However, the electrical design and manufacture of high-density TSVs is a challenge and has low fabrication capability. In this report, we have demonstrated a novel concept about a pre-fabricated high-density TSV interposer. A commonly reusable TSV design can eliminate the concern of the compatibility issue to interconnecting with the RDL trace. A 3% open ratio TSV with the diameter-to-depth aspect ratio 1:10 over 300 mm wafer is ultimately produced based on the modification of the dry Si etch parameters and subtle electroplating conditions to achieve a straight and void-free TSV. The pass-through current density on the TSV array can be effectively enhanced for a high I/O pin count application. The signal can reserve the integrity and possess an 8 Gbps transmission rate at 20 GHz high frequency. A pre-fabricated high-density TSV interposer can effectively reduce the production time and promote the throughput in 3D integrated circuit applications.