Electronic structure of multiwalled carbon nanotubes with impurities and defects

Abstract

The change in the density of electronic states (DOS) near the Fermi level induced by doping, ionic and thermal treatments, is studied. The model of band structure of multi-walled carbon nanotubes (MWCNTs) containing various types of defects, is constructed using experimental data of the DOS near the Fermi level. In the framework of the temperature Green functions method the expression for DOS near the Fermi level is received for MWCNTs of large diameter with impurities and structural defects of short-range order type. The results of theoretical investigations are in a good agreement with the experimental data. The phenomenon of gap opening or closing in the DOS is explained.The change in the density of electronic states (DOS) near the Fermi level induced by doping, ionic and thermal treatments, is studied. The model of band structure of multi-walled carbon nanotubes (MWCNTs) containing various types of defects, is constructed using experimental data of the DOS near the Fermi level. In the framework of the temperature Green functions method the expression for DOS near the Fermi level is received for MWCNTs of large diameter with impurities and structural defects of short-range order type. The results of theoretical investigations are in a good agreement with the experimental data. The phenomenon of gap opening or closing in the DOS is explained.