Khaled M. Chahrour , Naser M. Ahmed , M.R. Hashim , Ahmad M. Al-Diabat
{"title":"High Responsivity IR Photodetector Based on CuO Nanorod Arrays/AAO Assembly","authors":"Khaled M. Chahrour , Naser M. Ahmed , M.R. Hashim , Ahmad M. Al-Diabat","doi":"10.1016/j.proche.2016.03.016","DOIUrl":null,"url":null,"abstract":"<div><p>Fast with high-performance CuO nanorod arrays IR photodetector was fabricated using CuO nanorod arrays/AAO assembly. The IR photodetector based on MSM with Al contact electrodes and its optoelectronic properties were examined. The CuO nanorod arrays used in the experiment were synthesized by DC electrodeposition method into Si-based/AAO template. The electrical performance and photoelectric response performance were studied, and the results showed that IR photodetector exhibited a high sensitivity to 808<!--> <!-->nm infrared diode laser source. Both the response and recovery time were found to be fast; 0.19 and 0.15 s, respectively, which are shorter time compared to other IR photodetectors reported in the literature.</p></div>","PeriodicalId":20431,"journal":{"name":"Procedia Chemistry","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2016-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.proche.2016.03.016","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Procedia Chemistry","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1876619616000620","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
Fast with high-performance CuO nanorod arrays IR photodetector was fabricated using CuO nanorod arrays/AAO assembly. The IR photodetector based on MSM with Al contact electrodes and its optoelectronic properties were examined. The CuO nanorod arrays used in the experiment were synthesized by DC electrodeposition method into Si-based/AAO template. The electrical performance and photoelectric response performance were studied, and the results showed that IR photodetector exhibited a high sensitivity to 808 nm infrared diode laser source. Both the response and recovery time were found to be fast; 0.19 and 0.15 s, respectively, which are shorter time compared to other IR photodetectors reported in the literature.
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