Y. Kawakami, Masato Watanabe, K. Arai, S. Sugimoto
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引用次数: 6
Abstract
Lead (Pb)-free piezoelectric films formed on metallic substrates are of interest for advanced piezoelectric devices. BaTiO3 films with a thickness of 10 μm were deposited on Fe-Cr-Al based heat-resistant stainless-steel substrates using aerosol deposition at room temperature. The BT film annealed at 1473 K for 1h had 1.2μmdiameter grains, of which crystal phase was the perovskite single phase of the tetragonal crystal system. The dielectric constant was 2200, and the dielectric loss was 0.02. Piezoelectric displacement of the cantilevers with annealed BT films on stainless-steel substrates improved with increased annealing temperature. The piezoelectric constant d31 of film annealed at 1473 K was -56 pm/V.
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