B. Al-Nashy, B. T. S. Al-Mosawi, M. Oleiwi, A. Al-khursan
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引用次数: 1
Abstract
This work studies the thallium halogenide TlBr/BrCl quantum dot (QD) semiconductor structure and specifies its optical properties. This QD structure is poorly studied. High gain is obtained, with two peaks at
800
and
3000
n
m
. Doping is shown to increase the gain by one order. Then, TlBr QD semiconductor optical amplifier (SOA) characteristics are studied. High dB gain is shown mainly at the doped structure, which can be used in various inline applications.
本文研究了卤化铊TlBr/BrCl量子点(QD)的半导体结构，并对其光学性质进行了表征。对这种量子点结构的研究很少。获得了高增益，在800和3000 n m处有两个峰值。掺杂可以使增益增加一个数量级。然后，研究了TlBr QD半导体光放大器(SOA)的特性。高dB增益主要表现在掺杂结构上，可用于各种内联应用。
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