Data tiering in heterogeneous memory systems

Subramanya R. Dulloor, Amitabha Roy, Zheguang Zhao, N. Sundaram, N. Satish, R. Sankaran, Jeffrey R. Jackson, K. Schwan
{"title":"Data tiering in heterogeneous memory systems","authors":"Subramanya R. Dulloor, Amitabha Roy, Zheguang Zhao, N. Sundaram, N. Satish, R. Sankaran, Jeffrey R. Jackson, K. Schwan","doi":"10.1145/2901318.2901344","DOIUrl":null,"url":null,"abstract":"Memory-based data center applications require increasingly large memory capacities, but face the challenges posed by the inherent difficulties in scaling DRAM and also the cost of DRAM. Future systems are attempting to address these demands with heterogeneous memory architectures coupling DRAM with high capacity, low cost, but also lower performance, non-volatile memories (NVM) such as PCM and RRAM. A key usage model intended for NVM is as cheaper high capacity volatile memory. Data center operators are bound to ask whether this model for the usage of NVM to replace the majority of DRAM memory leads to a large slowdown in their applications? It is crucial to answer this question because a large performance impact will be an impediment to the adoption of such systems. This paper presents a thorough study of representative applications -- including a key-value store (MemC3), an in-memory database (VoltDB), and a graph analytics framework (GraphMat) -- on a platform that is capable of emulating a mix of memory technologies. Our conclusions are that it is indeed possible to use a mix of a small amount of fast DRAM and large amounts of slower NVM without a proportional impact to an application's performance. The caveat is that this result can only be achieved through careful placement of data structures. The contribution of this paper is the design and implementation of a set of libraries and automatic tools that enables programmers to achieve optimal data placement with minimal effort on their part. With such guided placement and with DRAM constituting only 6% of the total memory footprint for GraphMat and 25% for VoltDB and MemC3 (remaining memory is NVM with 4x higher latency and 8x lower bandwidth than DRAM), we show that our target applications demonstrate only a 13% to 40% slowdown. Without guided placement, these applications see, in the worst case, 1.5x to 5.9x slowdown on the same configuration. Based on a realistic assumption that NVM will be 5x cheaper (per bit) than DRAM, this hybrid solution also results in 2x to 2.8x better performance/$ than a DRAM-only system.","PeriodicalId":20737,"journal":{"name":"Proceedings of the Eleventh European Conference on Computer Systems","volume":"7 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2016-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"191","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Eleventh European Conference on Computer Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/2901318.2901344","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 191

Abstract

Memory-based data center applications require increasingly large memory capacities, but face the challenges posed by the inherent difficulties in scaling DRAM and also the cost of DRAM. Future systems are attempting to address these demands with heterogeneous memory architectures coupling DRAM with high capacity, low cost, but also lower performance, non-volatile memories (NVM) such as PCM and RRAM. A key usage model intended for NVM is as cheaper high capacity volatile memory. Data center operators are bound to ask whether this model for the usage of NVM to replace the majority of DRAM memory leads to a large slowdown in their applications? It is crucial to answer this question because a large performance impact will be an impediment to the adoption of such systems. This paper presents a thorough study of representative applications -- including a key-value store (MemC3), an in-memory database (VoltDB), and a graph analytics framework (GraphMat) -- on a platform that is capable of emulating a mix of memory technologies. Our conclusions are that it is indeed possible to use a mix of a small amount of fast DRAM and large amounts of slower NVM without a proportional impact to an application's performance. The caveat is that this result can only be achieved through careful placement of data structures. The contribution of this paper is the design and implementation of a set of libraries and automatic tools that enables programmers to achieve optimal data placement with minimal effort on their part. With such guided placement and with DRAM constituting only 6% of the total memory footprint for GraphMat and 25% for VoltDB and MemC3 (remaining memory is NVM with 4x higher latency and 8x lower bandwidth than DRAM), we show that our target applications demonstrate only a 13% to 40% slowdown. Without guided placement, these applications see, in the worst case, 1.5x to 5.9x slowdown on the same configuration. Based on a realistic assumption that NVM will be 5x cheaper (per bit) than DRAM, this hybrid solution also results in 2x to 2.8x better performance/$ than a DRAM-only system.
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异构内存系统中的数据分层
基于内存的数据中心应用需要越来越大的内存容量,但面临着扩展DRAM的固有困难和DRAM的成本所带来的挑战。未来的系统正试图通过将DRAM与高容量、低成本、但性能较低的非易失性存储器(NVM)(如PCM和RRAM)相结合来解决这些需求。用于NVM的一个关键使用模型是更便宜的高容量易失性存储器。数据中心运营商必然会问,这种使用NVM取代大部分DRAM内存的模式是否会导致其应用程序大幅放缓?回答这个问题至关重要,因为巨大的性能影响将成为采用此类系统的障碍。本文在一个能够模拟多种内存技术的平台上,对具有代表性的应用程序(包括键值存储(MemC3)、内存数据库(voldb)和图形分析框架(GraphMat))进行了深入的研究。我们的结论是,混合使用少量快速DRAM和大量较慢的NVM,而不会对应用程序的性能产生成比例的影响,这确实是可能的。需要注意的是,这个结果只能通过仔细放置数据结构来实现。本文的贡献是设计和实现了一组库和自动工具,使程序员能够以最小的努力实现最佳的数据放置。有了这样的引导布局,并且DRAM仅占GraphMat总内存占用的6%,占voldb和MemC3的25%(剩余内存是NVM,延迟比DRAM高4倍,带宽比DRAM低8倍),我们发现我们的目标应用程序仅表现出13%到40%的减速。如果没有引导放置,在最坏的情况下,这些应用程序在相同配置下的速度会降低1.5到5.9倍。基于一个现实的假设,NVM比DRAM便宜5倍(每比特),这种混合解决方案的性能也比只使用DRAM的系统高2倍到2.8倍。
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