K. Fröhlich, J. Šouc, D. Machajdík, A. Kobzev, F. Weiss, J. Sénateur, K. Dahmen
{"title":"Properties of Thin Epitaxial Aerosol MOCVD CeO2 Films Grown on (1102) Sapphire","authors":"K. Fröhlich, J. Šouc, D. Machajdík, A. Kobzev, F. Weiss, J. Sénateur, K. Dahmen","doi":"10.1051/JPHYSCOL:1995562","DOIUrl":null,"url":null,"abstract":"We have examined the properties of thin epitaxial CeO 2 films prepared by aerosol MOCVD. The films were deposited on (1102) sapphire at deposition temperatures between 500 °C and 900°C. The best properties were observed for the film grown at high deposition temperatures. The films have thickness ∼ 0.2 μm and the full width at half maximum of the rocking curve 0.3° - 0.4°. The minimal yield measured by backscattering spectrometry in the channeling mode was 5.5%, confirming high preferred orientation of the deposited films. The epitaxial character of the CeO 2 films was revealed by the measurement of the φ-scan. The aerosol MOCVD CeO 2 films were found to be suitable as a buffer layer for a preparation of superconducting high-T c films. YBa 2 Cu 3 O 1 superconducting films deposited on the CeO 2 /(1102) sapphire exhibit superconducting transition temperature T 0(R=0) = 86 K","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"5 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Le Journal De Physique Colloques","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1051/JPHYSCOL:1995562","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
We have examined the properties of thin epitaxial CeO 2 films prepared by aerosol MOCVD. The films were deposited on (1102) sapphire at deposition temperatures between 500 °C and 900°C. The best properties were observed for the film grown at high deposition temperatures. The films have thickness ∼ 0.2 μm and the full width at half maximum of the rocking curve 0.3° - 0.4°. The minimal yield measured by backscattering spectrometry in the channeling mode was 5.5%, confirming high preferred orientation of the deposited films. The epitaxial character of the CeO 2 films was revealed by the measurement of the φ-scan. The aerosol MOCVD CeO 2 films were found to be suitable as a buffer layer for a preparation of superconducting high-T c films. YBa 2 Cu 3 O 1 superconducting films deposited on the CeO 2 /(1102) sapphire exhibit superconducting transition temperature T 0(R=0) = 86 K
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