The kinetics of silicon dioxide chemical vapour deposition II: The model of the process

Piotr B. Grabiec, Jan Przyłuski
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引用次数: 2

Abstract

This paper presents a general analysis of chemical vapour deposition (CVD) of silicon dioxide by oxidizing silane with oxygen. The proposed model is based on the scheme of surface reactions described in Part I. The model considers all the important process steps, namely mass transport in the gas phase, adsorption and chemical reactions. The proposed approach makes it possible to analyse the kinetics of the process for a wide range of parameters. However, the resulting equation is complicated and includes some unknown coefficients. In a Part III these coefficients will be determined by fitting the model to the experimental data and the experimental verification of the model will be presented.

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二氧化硅化学气相沉积动力学II:过程模型
本文对氧氧化硅烷制备二氧化硅的化学气相沉积(CVD)工艺进行了综合分析。提出的模型基于第一部分中描述的表面反应方案,该模型考虑了所有重要的过程步骤,即气相的质量传递、吸附和化学反应。提出的方法使分析动力学的过程在一个广泛的参数范围。然而,得到的方程很复杂,并且包含一些未知系数。在第三部分中,这些系数将通过将模型拟合到实验数据来确定,并将介绍模型的实验验证。
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