{"title":"Effects of composition fraction on subthreshold behavior of InAsxSb(1-x) channel UTB MOSFETs","authors":"S. Dey, B. Dey, S. Bhattacherjee","doi":"10.1109/EDCT.2018.8405089","DOIUrl":null,"url":null,"abstract":"In this paper, we report for the first time the effect of composition fraction on the subthreshold behaviour for an n- channel InAsxSb1-x UTB MOSFET in nanoscale regime. Our model is based on numerical simulation technique using ATLAS, the 2-D device simulator. We have used ATLAS to obtain the drain current ID, transconductance gM, threshold voltage and subthreshold slope taking into account the effect of composition fraction (x). The drain current model is calibrated with reported experimental data. The transfer characteristic curves are utilized to find the threshold voltage and subthreshold slope as a function of composition fraction of InAsxSb1-x channel UTB MOSFETS. Our investigation reveals that composition fraction has a strong impact on the drain current and transconductance in subthreshold and weak inversion region. ON - OFF current ratio as well as subthreshold slope can be improved by changing the composition fraction of InAsxSb1-x alloy. Also threshold voltage can be shifted by changing the same.","PeriodicalId":6507,"journal":{"name":"2018 Emerging Trends in Electronic Devices and Computational Techniques (EDCT)","volume":"5 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Emerging Trends in Electronic Devices and Computational Techniques (EDCT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDCT.2018.8405089","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, we report for the first time the effect of composition fraction on the subthreshold behaviour for an n- channel InAsxSb1-x UTB MOSFET in nanoscale regime. Our model is based on numerical simulation technique using ATLAS, the 2-D device simulator. We have used ATLAS to obtain the drain current ID, transconductance gM, threshold voltage and subthreshold slope taking into account the effect of composition fraction (x). The drain current model is calibrated with reported experimental data. The transfer characteristic curves are utilized to find the threshold voltage and subthreshold slope as a function of composition fraction of InAsxSb1-x channel UTB MOSFETS. Our investigation reveals that composition fraction has a strong impact on the drain current and transconductance in subthreshold and weak inversion region. ON - OFF current ratio as well as subthreshold slope can be improved by changing the composition fraction of InAsxSb1-x alloy. Also threshold voltage can be shifted by changing the same.
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