J. Piprek, M. Siekacz, G. Muzioł, C. Skierbiszewski
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引用次数: 0
Abstract
Worldwide research efforts have been focusing on quantum efficiency enhancements of GaN-based light emitters. A promising approach is the separation of multiple active regions by tunnel junctions, enabling electron-hole pairs to generate more than one photon. Utilizing advanced numerical device simulation, we here analyze internal physics and performance limitations of such InGaN/GaN bipolar cascade laser which recently demonstrated superior slope efficiency.
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