Evolution of Power Amplifiers for Mobile Phone Terminals from the 2nd Generation to the 5th Generation

Satoshi Tanaka, Kenji Mukai, Shohei Imai, Hiroshi Okabe
{"title":"Evolution of Power Amplifiers for Mobile Phone Terminals from the 2nd Generation to the 5th Generation","authors":"Satoshi Tanaka, Kenji Mukai, Shohei Imai, Hiroshi Okabe","doi":"10.1587/transele.2022mmi0008","DOIUrl":null,"url":null,"abstract":"SUMMARY Mobile phone systems continue to evolve from the 2nd generation, which began in the early 1990s, to the 5th generation, which is now in service. Along with this evolution, the power amplifier (PA) is also evolved. The characteristics required for PA are changing with each generation. In this paper, we will give an overview of the evolution of PAs from the 2nd generation mobile phones such as GSM (global system for mobile communications) to the 5th generation mobile phones that is often called NR (new radio), in particular, the circuit system. Specifically, the following five items will be described. (1) Ramp-up and ramp-down power control circuit corresponding to GSM, (2) Self-bias circuit technology for improving linearity that becomes important after W-CDMA (wideband code di- vision multiple access), (3) Power mode switching methods for improving e ffi ciency at low output power, (4) Power combining methods that have be- come important since LTE (long term evolution), and (5) Backo ff e ffi ciency improvement methods represented by ET (envelop tracking) and Doherty PA.","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEICE Trans. Electron.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1587/transele.2022mmi0008","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

SUMMARY Mobile phone systems continue to evolve from the 2nd generation, which began in the early 1990s, to the 5th generation, which is now in service. Along with this evolution, the power amplifier (PA) is also evolved. The characteristics required for PA are changing with each generation. In this paper, we will give an overview of the evolution of PAs from the 2nd generation mobile phones such as GSM (global system for mobile communications) to the 5th generation mobile phones that is often called NR (new radio), in particular, the circuit system. Specifically, the following five items will be described. (1) Ramp-up and ramp-down power control circuit corresponding to GSM, (2) Self-bias circuit technology for improving linearity that becomes important after W-CDMA (wideband code di- vision multiple access), (3) Power mode switching methods for improving e ffi ciency at low output power, (4) Power combining methods that have be- come important since LTE (long term evolution), and (5) Backo ff e ffi ciency improvement methods represented by ET (envelop tracking) and Doherty PA.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
从第二代到第五代移动电话终端功率放大器的演进
移动电话系统继续从20世纪90年代初开始的第二代发展到现在投入使用的第五代。随着这种演变,功率放大器(PA)也在演变。PA所需的特性每一代都在变化。在本文中,我们将概述pa从第二代移动电话(如GSM(全球移动通信系统))到第五代移动电话(通常称为NR(新无线电))的演变,特别是电路系统。具体来说,将描述以下五个项目。(1) GSM对应的升压和降压功率控制电路,(2)W-CDMA(宽带码视多址)之后重要的改善线性度的自偏置电路技术,(3)在低输出功率下提高效率的功率模式切换方法,(4)自LTE(长期演进)以来重要的功率组合方法,(5)以ET(包络跟踪)和Doherty PA为代表的回切效率改进方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Vapor Deposition of Fluoropolymer Thin Films for Antireflection Coating Fundamental Study on Grasping Growth State of Paddy Rice Using Quad-Polarimetric SAR Data Millimeter-Wave Single-Pixel Imaging Using Electrically-Switchable Liquid-Crystal Mask Approaches to High Performance Terahertz-Waves Emitting Devices Utilizing Single Crystals of High Temperature Superconductor Bi2Sr2CaCu2O8+δ Design and Analysis of Si/CaF2 Near-Infrared (λ∼1.7µm) DFB Quantum Cascade Laser for Silicon Photonics
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1