Morphology and Film Growth in CVD Reactions

V. Hlavácek, J. Thiart, D. Orlicki
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引用次数: 6

Abstract

The paper reports on three major aspects of CVD reactor simulation: 1) Modeling of transport phenomena in conventional CVD and their effect on the film growth; 2) Modeling of plasma enhanced CVD and deposition of thin films; 3) Modeling of film growth and analysis of stability and morphology case studies. Case studies involve deposition of boron on W wire, deposition of Si-H and morphology development for a typical CVD reaction. Numerical methods of simulation are discussed in detail for each category mentioned above.
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CVD反应的形态和膜生长
本文介绍了CVD反应器模拟的三个主要方面:1)模拟常规CVD中的输运现象及其对膜生长的影响;2)等离子体增强CVD和薄膜沉积模型;3)薄膜生长模型及稳定性和形态分析案例研究。案例研究包括硼在W线上的沉积,硅-氢的沉积和典型CVD反应的形态发展。对上述每一类的数值模拟方法进行了详细的讨论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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