Excess current of a point contact on a normal-metal single crystal backed by a superconductor

P. Son, H. Kempen, P. Wyder
{"title":"Excess current of a point contact on a normal-metal single crystal backed by a superconductor","authors":"P. Son, H. Kempen, P. Wyder","doi":"10.1088/0305-4608/18/10/012","DOIUrl":null,"url":null,"abstract":"Electrons that are injected into a Ag single-crystal slab at a point contact are focused back onto the contact as holes after Andreev reflection at a Ag-Pb interface. A small applied magnetic field shifts the position of the focusing spot on the scale of the point-contact diameter. The excess current due to the holes is measured both as a function of magnetic field and as a functions of voltage. The results do not completely agree with a simple ballistic model. The deviation for large magnetic field can be understood qualitatively by assuming that the electrons and holes are deflected at random over small angles, for instance by the long-range strain field of dislocations. The observed structure of the excess current for small magnetic field and voltage is probably related to the presence of scattering centres in the point-contact area, although not all features can be explained this way. The corresponding length scales imply that the wave character of the quasi-particles has to be taken into account.","PeriodicalId":16828,"journal":{"name":"Journal of Physics F: Metal Physics","volume":"700 1","pages":"2211-2221"},"PeriodicalIF":0.0000,"publicationDate":"1988-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics F: Metal Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/0305-4608/18/10/012","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

Electrons that are injected into a Ag single-crystal slab at a point contact are focused back onto the contact as holes after Andreev reflection at a Ag-Pb interface. A small applied magnetic field shifts the position of the focusing spot on the scale of the point-contact diameter. The excess current due to the holes is measured both as a function of magnetic field and as a functions of voltage. The results do not completely agree with a simple ballistic model. The deviation for large magnetic field can be understood qualitatively by assuming that the electrons and holes are deflected at random over small angles, for instance by the long-range strain field of dislocations. The observed structure of the excess current for small magnetic field and voltage is probably related to the presence of scattering centres in the point-contact area, although not all features can be explained this way. The corresponding length scales imply that the wave character of the quasi-particles has to be taken into account.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
由超导体支撑的普通金属单晶上的点接触产生的过量电流
在点接触处注入Ag单晶板的电子在Ag- pb界面经过Andreev反射后以空穴的形式聚焦到接触面上。一个小的外加磁场改变聚焦点在点接触直径尺度上的位置。由于空穴产生的过量电流被测量为磁场的函数和电压的函数。结果并不完全符合一个简单的弹道模型。假设电子和空穴在小角度上随机偏转,例如通过位错的远程应变场,可以定性地理解大磁场的偏差。观察到的小磁场和电压下的过量电流的结构可能与点接触区域中散射中心的存在有关,尽管并非所有特征都可以这样解释。相应的长度尺度意味着必须考虑准粒子的波动特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Electrical resistivity and magnetoresistance in Fe-B-C amorphous alloys Temperature dependence of the elastic constants of La3S4 Influence of interface scattering on the resistance of polycrystalline Au/Pd multilayered thin films The atomic and electronic structure of metallic glasses: search for a structure-induced minimum in the density of states Electronic density of states in pseudobinary compounds. II. The effect of off-diagonal randomness
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1