P.J.A. Thijs, L.F. Tiemeijer, J.J.M. Binsma, T. Van Dongen
{"title":"Strained-layer InGaAs(P) quantum well semiconductor lasers and semiconductor laser amplifiers","authors":"P.J.A. Thijs, L.F. Tiemeijer, J.J.M. Binsma, T. Van Dongen","doi":"10.1016/0165-5817(95)98697-V","DOIUrl":null,"url":null,"abstract":"<div><p>Progress in long-wavelength strained (compressive and tensile) InGaAs(P) quantum well semiconductor lasers and amplifiers for applications in optical fibre communication systems is reviewed. By the application of grown-in strain, device performance is considerably improved to such an extent that conventional bulk and unstrained quantum well active-layer devices are outperformed, while high reliability, similar to that of unstrained devices, is maintained.</p></div>","PeriodicalId":101018,"journal":{"name":"Philips Journal of Research","volume":"49 3","pages":"Pages 187-224"},"PeriodicalIF":0.0000,"publicationDate":"1995-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0165-5817(95)98697-V","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Philips Journal of Research","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/016558179598697V","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
Progress in long-wavelength strained (compressive and tensile) InGaAs(P) quantum well semiconductor lasers and amplifiers for applications in optical fibre communication systems is reviewed. By the application of grown-in strain, device performance is considerably improved to such an extent that conventional bulk and unstrained quantum well active-layer devices are outperformed, while high reliability, similar to that of unstrained devices, is maintained.
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