Effect of gamma irradiation on the dielectric properties of the TlGaS2 single crystal

Abstract

The real (ε′) and imaginary (ε″) parts of complex dielectric permittivity and ac-conductivity (σac) across the layers of TlGaS2 single crystal have been measured in the frequency range f = 5 × 10⁴ − 3.5 × 10⁷ Hz before and after gamma irradiation with doses Dγ from 5 × 10⁴ to 2.15 × 10⁶ rad. It was shown that the accumulation of radiation dose in TlGaS2 single crystal leads to tangible increase in ε″ and to increase of ε″ dispersion. The main parameters of localized states in TlGaS2 single crystal before and after gamma irradiation were evaluated from high- frequency dielectric measurements.