{"title":"Effect of transparent conductive oxide material and frontal interface on characteristics of Si:H p-i-n junction","authors":"H. E. Martinez-Mateo, A. Kosarev","doi":"10.1109/ICEEE.2014.6978269","DOIUrl":null,"url":null,"abstract":"In this work we study the influence of frontal interface modification with titanium and carbon layers between p+-layer and transparent conductive oxide (TCO). Indium titanium oxide (ITO) and zinc oxide doped by aluminum (AZO) are used as TCO. Impact on performance characteristics is determined by current voltage measurements in dark and under AM1.5 illumination together with spectral measurements in the range of hν = 1.5 to 3.5 eV. The Si:H p-i-n structures with carbon film inserted between TCO and p+ layer as window show increase of the short circuit current by 37% compared to those without carbon film due to enhancement of short wavelength response.","PeriodicalId":6661,"journal":{"name":"2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)","volume":"31 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEEE.2014.6978269","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this work we study the influence of frontal interface modification with titanium and carbon layers between p+-layer and transparent conductive oxide (TCO). Indium titanium oxide (ITO) and zinc oxide doped by aluminum (AZO) are used as TCO. Impact on performance characteristics is determined by current voltage measurements in dark and under AM1.5 illumination together with spectral measurements in the range of hν = 1.5 to 3.5 eV. The Si:H p-i-n structures with carbon film inserted between TCO and p+ layer as window show increase of the short circuit current by 37% compared to those without carbon film due to enhancement of short wavelength response.
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