Symmetry‐Based Model Hamiltonians for Topological Analysis of 2D Materials with Square Lattice

Chani Stella van Niekerk, R. Warmbier
{"title":"Symmetry‐Based Model Hamiltonians for Topological Analysis of 2D Materials with Square Lattice","authors":"Chani Stella van Niekerk, R. Warmbier","doi":"10.1002/pssb.202300018","DOIUrl":null,"url":null,"abstract":"Classes of symmetry‐based model Hamiltonians can be constructed with specific point group restrictions. These models combine the flexibility of tight‐binding models with the analytical simplicity of the Su–Schrieffer–Heeger model and can be scaled in either direction. The applicability of models with two, three, and four bands to topological analysis is investigated and limitations to describing topological behaviour are assessed. The models are applied to fitting density functional theory (DFT) band structures for selected 2D materials with and without spin–orbit coupling. Suitable parameters for selected materials are obtained and used to describe the topological phase of the materials. Based on these results, a single two‐, three‐, and four‐band model is found which describes the band structure and topological properties of all the selected 2D materials. Suitable simplifications to the models are outlined to further illustrate how the analyzability can be scaled with the accuracy of the model. While generally a higher degree of symmetry helps the formation of topological phases, extremely symmetric point groups like D 4h $D_{\\text{4h}}$ restrict the allowed interactions to a degree that makes topological phases less easy to achieve.","PeriodicalId":20107,"journal":{"name":"physica status solidi (b)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"physica status solidi (b)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/pssb.202300018","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Classes of symmetry‐based model Hamiltonians can be constructed with specific point group restrictions. These models combine the flexibility of tight‐binding models with the analytical simplicity of the Su–Schrieffer–Heeger model and can be scaled in either direction. The applicability of models with two, three, and four bands to topological analysis is investigated and limitations to describing topological behaviour are assessed. The models are applied to fitting density functional theory (DFT) band structures for selected 2D materials with and without spin–orbit coupling. Suitable parameters for selected materials are obtained and used to describe the topological phase of the materials. Based on these results, a single two‐, three‐, and four‐band model is found which describes the band structure and topological properties of all the selected 2D materials. Suitable simplifications to the models are outlined to further illustrate how the analyzability can be scaled with the accuracy of the model. While generally a higher degree of symmetry helps the formation of topological phases, extremely symmetric point groups like D 4h $D_{\text{4h}}$ restrict the allowed interactions to a degree that makes topological phases less easy to achieve.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于对称的二维方形晶格材料拓扑分析模型哈密顿量
一类基于对称的模型哈密顿量可以用特定的点群限制来构造。这些模型结合了紧密结合模型的灵活性和Su-Schrieffer-Heeger模型的分析简便性,并且可以在任何方向上缩放。研究了二带、三带和四带模型在拓扑分析中的适用性,并评估了描述拓扑行为的局限性。将该模型应用于具有和不具有自旋轨道耦合的二维材料的密度泛函理论(DFT)带结构的拟合。获得了所选材料的合适参数,并用于描述材料的拓扑相。基于这些结果,我们发现了一个单一的二带、三带和四带模型,它描述了所有选定的二维材料的能带结构和拓扑特性。本文概述了对模型的适当简化,以进一步说明如何根据模型的精度缩放可分析性。虽然通常较高的对称性有助于拓扑相的形成,但极端对称的点群,如d4h $D_{\text{4h}}$,在一定程度上限制了允许的相互作用,使得拓扑相不太容易实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Activation Energy of DC Hopping Conductivity of Lightly Doped Weakly Compensated Crystalline Semiconductors Learning Model Based on Electrochemical Metallization Memristor with Cluster Residual Effect Incorporation and Interaction of Co‐Doped Be and Mg in GaN Grown by Metal‐Organic Chemic Vapor Deposition Extending the Tight‐Binding Model by Discrete Fractional Fourier Transform Theoretical Study of Magnetization and Electrical Conductivity of Ion‐Doped KBiFe2O5 Nanoparticles
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1