{"title":"CMUT ultrasonic power link front-end for wireless power transfer deep in body","authors":"Saoni Banerji, W. Goh, J. Cheong, M. Je","doi":"10.1109/IMWS-BIO.2013.6756176","DOIUrl":null,"url":null,"abstract":"Wireless implantable devices have revolutionized the field of biomedical engineering for as long as adequate power supplies are conjured. This paper presents an ultrasonic power link front-end interfaced with a capacitive micromachined ultrasonic transducer (CMUT). The ultrasonic power link front-end consists of a rectifier, a charge pump, a clock extractor and a phase generator. The power link front-end designed in 0.18-μm CMOS process provides a 17 V DC supply for the implant microsystem, e.g. neural stimulator. It achieves an overall power efficiency of 0.3% in simulation.","PeriodicalId":6321,"journal":{"name":"2013 IEEE MTT-S International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications (IMWS-BIO)","volume":"56 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE MTT-S International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications (IMWS-BIO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMWS-BIO.2013.6756176","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
Wireless implantable devices have revolutionized the field of biomedical engineering for as long as adequate power supplies are conjured. This paper presents an ultrasonic power link front-end interfaced with a capacitive micromachined ultrasonic transducer (CMUT). The ultrasonic power link front-end consists of a rectifier, a charge pump, a clock extractor and a phase generator. The power link front-end designed in 0.18-μm CMOS process provides a 17 V DC supply for the implant microsystem, e.g. neural stimulator. It achieves an overall power efficiency of 0.3% in simulation.