Passivation of the Recombination Activities with Rubidium incorporation for Efficient and Stable Sn- HaP Solar Cells

Abstract

A number of non- toxic candidates such as Sn, Ge, Bi, and Sb based halide perovskites, etc. have been explored as Pb free HaPSCs Among these alternatives, Sn-based halide perovskites (Sn-HaP) are promising alternatives. The oxidative instability of tin-based halide perovskite (Sn-HaP) deteriorates the device performance. In this report, we have explored the role of Rb insertion in FASnI3lattice for device performance. The Rb incorporation in crystal lattice facilitates uniform morphology with better crystal quality and suppression of oxidation of Sn2+. The device analysis showed higher diffusion potential and mitigation of defect activities with RbCl additive in Sn-HaPSCs. This leads to the improvement in device performance and stability with the power conversion efficiency of ~3 % for pure FASnI3to 6 % for Rb incorporated FASnI3.