Prospects for epitaxial c-Er2O3 as a CMOS-compatible lasing material

C. P. Michael, O. Painter, H. Yuen, V. Sabnis, A. Jamora, S. Semans, P. Atanackovic
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引用次数: 1

Abstract

The emission of high-Q c-Er2O3 resonators displays little inhomogeneous broadening, robust vacuum-Rabi splitting, and strong upconversion. Considering these effects and a rate-equation model, we analyze the prospects for optically pumped on-chip lasing using c-Er2O3.
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外延c-Er2O3作为cmos兼容激光材料的前景
高q c-Er2O3谐振腔的发射表现出较小的非均匀展宽、强劲的真空-拉比分裂和强的上转换。考虑到这些影响和速率方程模型,我们分析了使用c-Er2O3的光泵片上激光的前景。
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