Reactive interfaces: perovskite degradation at metal-oxide interfaces probed by photoelectron spectroscopy

S. Olthof
{"title":"Reactive interfaces: perovskite degradation at metal-oxide interfaces probed by photoelectron spectroscopy","authors":"S. Olthof","doi":"10.1117/12.2595286","DOIUrl":null,"url":null,"abstract":"In optoelectronic devices, the function and performance depends crucially on the proper alignment of the energy level landscape throughout the device, allowing for efficient charge transport across the various interfaces. \nIn perovskites it turned out that these interfaces can be rather complex. On the one hand, interface dipoles and band bending occur. But more importantly, the perovskite composition and formation can be significantly influenced by chemical reactions taking place at these interfaces. \nIn this talk I will summarize our recent work on a variety of metal-oxides in which we use photoelectron spectroscopy to analyze which components are responsible for the strong interface chemistry. For this, we looked at a variety of different perovskites (i.e. organic vs. inorganic ones, I vs. Br, etc.) as well as the individual perovskite precursors. \nOverall, I will show how photoelectron spectroscopy measurements can help to probe and understand the processes going on at these vario","PeriodicalId":19672,"journal":{"name":"Organic and Hybrid Light Emitting Materials and Devices XXV","volume":"390 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2021-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Organic and Hybrid Light Emitting Materials and Devices XXV","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2595286","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

In optoelectronic devices, the function and performance depends crucially on the proper alignment of the energy level landscape throughout the device, allowing for efficient charge transport across the various interfaces. In perovskites it turned out that these interfaces can be rather complex. On the one hand, interface dipoles and band bending occur. But more importantly, the perovskite composition and formation can be significantly influenced by chemical reactions taking place at these interfaces. In this talk I will summarize our recent work on a variety of metal-oxides in which we use photoelectron spectroscopy to analyze which components are responsible for the strong interface chemistry. For this, we looked at a variety of different perovskites (i.e. organic vs. inorganic ones, I vs. Br, etc.) as well as the individual perovskite precursors. Overall, I will show how photoelectron spectroscopy measurements can help to probe and understand the processes going on at these vario
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反应界面:用光电子能谱探测金属-氧化物界面上钙钛矿的降解
在光电器件中,功能和性能关键取决于整个器件的能级景观的正确排列,从而允许在各种接口上有效地传输电荷。在钙钛矿中,这些界面可能相当复杂。一方面,界面偶极子和带弯曲发生。但更重要的是,在这些界面上发生的化学反应会显著影响钙钛矿的组成和形成。在这次演讲中,我将总结我们最近在各种金属氧化物方面的工作,我们使用光电子能谱来分析哪些成分负责强界面化学。为此,我们研究了各种不同的钙钛矿(即有机钙钛矿与无机钙钛矿、I钙钛矿与Br钙钛矿等)以及单个钙钛矿前体。总的来说,我将展示光电子能谱测量如何帮助探测和理解这些不同的过程
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