{"title":"Development of Organic Electronics and Mott-FETs Based on Molecular Conductors","authors":"H. Yamamoto","doi":"10.3175/MOLSCI.4.A0032","DOIUrl":null,"url":null,"abstract":"Two novel electronics based on molecular conductors are discussed. One is a crystalline supramolecular nanowire comprising conducting cation-radical molecules and halogen-bonded insulating networks. The way to utilize this nanowire for nano-size wiring in high-density memory is proposed. The other is a field effect transistor with highly correlated electrons on the conducting molecules. The Mott insulating state of organic interface is transformed into a metallic-like state by electrostatic doping, or band-filling control due to the capacitive effect of the transistor configuration. The Mott-transition transistor can be a new type of transistor driven by a phase transition.","PeriodicalId":19105,"journal":{"name":"Molecular Science","volume":"8 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2010-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Molecular Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3175/MOLSCI.4.A0032","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Two novel electronics based on molecular conductors are discussed. One is a crystalline supramolecular nanowire comprising conducting cation-radical molecules and halogen-bonded insulating networks. The way to utilize this nanowire for nano-size wiring in high-density memory is proposed. The other is a field effect transistor with highly correlated electrons on the conducting molecules. The Mott insulating state of organic interface is transformed into a metallic-like state by electrostatic doping, or band-filling control due to the capacitive effect of the transistor configuration. The Mott-transition transistor can be a new type of transistor driven by a phase transition.