{"title":"A 10-GSamples/s track and hold amplifier using reference current source unaffected by temperature in 0.18µm SiGe BiCMOS technology","authors":"Yasin Talay, O. Aytar","doi":"10.1109/ICEEE2.2018.8391311","DOIUrl":null,"url":null,"abstract":"This paper presents design and simulation of a track and hold amplifier(THA) and a temperature independent reference current circuit for high speed analog digital converter in 0.18pm SiGe BiCMOS process BCS180G of HHNEC. The THAs circuit is based on the switched emitter follower topology. Therewithal, the reference current source circuit consists of a proportional to absolute temperature(PTAT) and complementary to absolute temperature(CTAT) circuits. The reference current source unaffected by temperature is working with an accuracy of %0.4 between -45 °C and 120 °C. Respectively, the power supply voltage of the designed THAs circuits and temperature independent reference current circuit is 5V and 3.3V. The active layout area of designed circuit is 0.02534mm2(132pm x 192pm), consuming 465mW at 10GS/s sampling rate.","PeriodicalId":6482,"journal":{"name":"2018 5th International Conference on Electrical and Electronic Engineering (ICEEE)","volume":"56 1","pages":"110-114"},"PeriodicalIF":0.0000,"publicationDate":"2018-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 5th International Conference on Electrical and Electronic Engineering (ICEEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEEE2.2018.8391311","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper presents design and simulation of a track and hold amplifier(THA) and a temperature independent reference current circuit for high speed analog digital converter in 0.18pm SiGe BiCMOS process BCS180G of HHNEC. The THAs circuit is based on the switched emitter follower topology. Therewithal, the reference current source circuit consists of a proportional to absolute temperature(PTAT) and complementary to absolute temperature(CTAT) circuits. The reference current source unaffected by temperature is working with an accuracy of %0.4 between -45 °C and 120 °C. Respectively, the power supply voltage of the designed THAs circuits and temperature independent reference current circuit is 5V and 3.3V. The active layout area of designed circuit is 0.02534mm2(132pm x 192pm), consuming 465mW at 10GS/s sampling rate.
本文设计并仿真了用于高速模拟数字转换器的轨道保持放大器(THA)和不依赖温度的参考电流电路，该电路采用HHNEC公司的0.18pm SiGe BiCMOS工艺BCS180G。THAs电路基于开关发射极跟随器拓扑结构。因此，参考电流源电路由与绝对温度成正比的电路和与绝对温度互补的电路组成。不受温度影响的参考电流源在-45°C和120°C之间的工作精度为%0.4。设计的THAs电路和温度无关参考电流电路的电源电压分别为5V和3.3V。设计电路的有源布局面积为0.02534mm2(132pm x 192pm)，在10GS/s采样率下功耗为465mW。
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