Molecular patterning with a two-dimensional network polymer LB film 2: Drawing patterns by an electron beam

Tokuji Miyashita, Masakazu Nakaya, Atsushi Aoki
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引用次数: 4

Abstract

Electron beam lithography was investigated using a cross-linkable polymer Langmuir–Blodgett (LB) film. Cross-linking reaction occurs in the LB film with electron beam irradiation as well as UV light irradiation and the irradiated LB film becomes insoluble in the organic solvents to form a two-dimensional network in the LB film. The sensitivity and contrast of the cross-linkable polymer LB film are 3 μC cm-2 and 0.64, respectively. The limiting resolution of patterning is 0.2 μm line-and-space. The electron beam lithography using the cross-linkable polymer LB film is applicable to the future nanotechnology.

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二维网状聚合物LB膜的分子图谱2:电子束绘制图谱
采用交联聚合物Langmuir-Blodgett (LB)薄膜研究了电子束光刻技术。在电子束照射和紫外光照射下,LB膜发生交联反应,被照射后LB膜不溶于有机溶剂,在LB膜内形成二维网络。交联聚合物LB膜的灵敏度为3 μC cm-2,对比度为0.64。图案化的极限分辨率为0.2 μm。利用可交联聚合物LB薄膜的电子束光刻技术在未来的纳米技术中具有广泛的应用前景。
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