Vertically integrated silicon single crystalline MEMS switch

Abstract

A DC to RF shunt contact micro-electro-mechanical switch was fabricated. The fabrication of the MEMS device was preformed using a bulk micromachining process on an SOI wafer followed by a vertical integration to a microwave circuit wafer. The pull-in voltage and natural frequency of the switch were characterized. Also, RF performances at both switch states were measured. The concept of the packaged switch described in this paper enables us to offer a-stand alone switch, independent of the RF circuit substrate material or technology being used.