Effect of insulator layer thickness on electrical properties of Al/BiFeO3/ZrO2/p-Si for nonvolatile memory applications

IF 1.3 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Ferroelectrics Letters Section Pub Date : 2020-03-26 DOI:10.1080/07315171.2020.1810984
Ashutosh Kumar Singh, Chandravilash Rai, S. Singh
{"title":"Effect of insulator layer thickness on electrical properties of Al/BiFeO3/ZrO2/p-Si for nonvolatile memory applications","authors":"Ashutosh Kumar Singh, Chandravilash Rai, S. Singh","doi":"10.1080/07315171.2020.1810984","DOIUrl":null,"url":null,"abstract":"Abstract BiFeO3 (BFO) and ZrO2 have been deposited on p-type (100) silicon substrate by sol-gel process and rf sputtering method, respectively. Metal-ferroelectric-insulator-semiconductor capacitor has been fabricated with 100 nm BFO and 10 nm ZrO2 shows maximum memory window of 1.54 V as compared to other fabricated capacitors with 5 and 15 nm insulating layer thickness. Improvement in current density has been also observed in different thickness of buffer layer of MFIS capacitors. The improved current density of order of 10-7 A/cm2 has been observed in MF(100nm)I(10nm)S structure. It has been also observed in MF(100nm)I(10nm)S structure that no charge value degrades up to 1011 iteration cycles.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":1.3000,"publicationDate":"2020-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ferroelectrics Letters Section","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1080/07315171.2020.1810984","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0

Abstract

Abstract BiFeO3 (BFO) and ZrO2 have been deposited on p-type (100) silicon substrate by sol-gel process and rf sputtering method, respectively. Metal-ferroelectric-insulator-semiconductor capacitor has been fabricated with 100 nm BFO and 10 nm ZrO2 shows maximum memory window of 1.54 V as compared to other fabricated capacitors with 5 and 15 nm insulating layer thickness. Improvement in current density has been also observed in different thickness of buffer layer of MFIS capacitors. The improved current density of order of 10-7 A/cm2 has been observed in MF(100nm)I(10nm)S structure. It has been also observed in MF(100nm)I(10nm)S structure that no charge value degrades up to 1011 iteration cycles.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
绝缘层厚度对Al/BiFeO3/ZrO2/p-Si非易失性存储器电性能的影响
摘要:采用溶胶-凝胶法和射频溅射法分别在p型(100)硅衬底上沉积了BiFeO3 (BFO)和ZrO2。用100 nm的BFO和10 nm的ZrO2制备了金属-铁电-绝缘体-半导体电容器,与其他5和15 nm的绝缘层厚度制备的电容器相比,其最大存储窗口为1.54 V。在不同的缓冲层厚度下,电流密度也有所提高。在MF(100nm)I(10nm)S结构中,电流密度提高了10-7 A/cm2。在MF(100nm)I(10nm)S结构中也观察到,在1011个迭代周期内没有电荷值退化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Ferroelectrics Letters Section
Ferroelectrics Letters Section 物理-物理:凝聚态物理
CiteScore
1.10
自引率
0.00%
发文量
1
审稿时长
4.8 months
期刊介绍: Ferroelectrics Letters is a separately published section of the international journal Ferroelectrics. Both sections publish theoretical, experimental and applied papers on ferroelectrics and related materials, including ferroelastics, ferroelectric ferromagnetics, electrooptics, piezoelectrics, pyroelectrics, nonlinear dielectrics, polymers and liquid crystals. Ferroelectrics Letters permits the rapid publication of important, quality, short original papers on the theory, synthesis, properties and applications of ferroelectrics and related materials.
期刊最新文献
From NdNiO2 to a Mott Multiferroic BiNiO2 Effects of high contents of dielectric inclusions on ferroelectricity in dielectric-ferroelectric nanocomposites with dimethylammonium aluminum sulfate hexahydrate Optical analysis of RE3+ (re = Sm, Dy): MgLa2V2O9 phosphors Design and Characterization of Eu2+/Ln3+ Co-doped SrAl2Si2O8 Photostimulated Phosphors for Optical Information Storages First Principles Study of Electron Structure of LaxBa1-xMnO3 Crystals
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1