Preparation and Characterization of Vanadium Pentoxide Using Spray Pyrolysis Technique

M. Mohamed, S. T. Bishay, M. Boshta
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Abstract

A chemical spray pyrolysis technique was used to deposit a vanadium pentoxide (V2O5) thin films on glass substrate with a deposition temperature ranged from 300°C to 500°C in step of 50°C. From ammonium meta vanadate aqua precursor solution molarity of (0.1 M) was used as a source of vanadium. The effect of deposition temperature on structure, morphological, electrical conductivity and optical properties wasanalyzedat constant preparation time, solution molarity and the distance between spray nozzle and substrate.X-ray diffraction patterns shown that an orthorhombic cubic structure withgrowth along (001) plane. With increasing the substrate temperature, the electrical conductivity was increased, and the scanning electron microscopy clarified that the crystallinity of V2O5 thin films was effectively modified. The optical results revealed that energy band gap of V2O5 films deposited at 400 C, 450C and 500C is 2.38 eV for direct allowed transition. Based on the observed results the V2O5 phase can be well controlled by altering the substrate temperature. All prepared thin films up to 400C show transparency in both visible and near IR region.
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喷雾热解法制备五氧化二钒及其表征
采用化学喷雾热解技术在玻璃基板上沉积五氧化二钒(V2O5)薄膜,沉积温度为300 ~ 500℃,分步温度为50℃。以偏钒酸铵水前驱体溶液为原料,采用摩尔浓度为(0.1 M)作为钒源。在一定的制备时间、溶液摩尔浓度和喷嘴与衬底之间的距离下,分析了沉积温度对结构、形貌、电导率和光学性能的影响。x射线衍射图显示为正交立方结构,沿(001)平面生长。随着衬底温度的升高,电导率提高,扫描电镜结果表明,V2O5薄膜的结晶度得到了有效的修饰。光学结果表明,在400℃、450℃和500℃下沉积的V2O5薄膜在直接允许跃迁时的能带隙为2.38 eV。结果表明,通过改变衬底温度可以很好地控制V2O5相。所有制备的薄膜在400℃下均显示出可见光和近红外区的透明度。
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