S. Boppel, A. Lisauskas, D. Seliuta, L. Minkevičius, I. Kašalynas, G. Valušis, V. Krozer, H. Roskos
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引用次数: 6
Abstract
We report on the performance of silicon CMOS-transistor-based plasmonic THz detectors up to 4.25 THz. Room-temperature responsivity values of 1011 V/W at 584 GHz, 90 V/W at 3.125 THz and 11 V/W at 4.25 THz are reported. When cooled down to 20 K a maximum responsivity of 3.47 kV/W and a noise-equivalent power of 3 pW/√Hz are reached.
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