The Influence of Different Complexing Agents on the Properties of SILAR-Deposited Cobalt Selenide Thin Films

H. Soonmin
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Abstract

The nanostructured thin films have good physical properties, and could be used in the various applications such as capacitor, photo detector, ultra violet opto electronics, light emitting diode, photonic integrated circuit and solar cell applications. The successive ionic layer adsorption and reaction (SILAR) method is one of the common chemical deposition techniques. This method has many advantages such as the simplest & the cheapest method, and required low temperature deposition process. This is the first time, preparation of cobalt selenide thin films onto soda lime glass slide at room temperature in the presence of various complexing agents (ammonia, triethanolamine and ethylenediaminetetraacetic acid disodium salt). Characterization of thin films was carried by using x-ray diffraction, atomic force microscopy and UV-visible spectrophotometer. AFM analysis showed that the cobalt selenide thin films prepared in the presence of ammonia exhibited uniform and completely covered the entire surface area of substrate. XRD data confirmed that obtained thin films (using ammonia and triethanolamine) were polycrystalline with well-developed phases. Optical properties indicated the band gap values of all films were in the range of 1.8 to 2 eV, suitable to be used in solar cell applications.
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不同络合剂对硅沉积硒化钴薄膜性能的影响
纳米结构薄膜具有良好的物理性能,可用于电容器、光电探测器、紫外光电、发光二极管、光子集成电路和太阳能电池等领域。连续离子层吸附反应(SILAR)法是常用的化学沉积技术之一。该方法具有最简单和最便宜的优点,并且需要低温沉积工艺。这是首次在室温条件下,在各种络合剂(氨、三乙醇胺和乙二胺四乙酸二钠盐)的存在下,在碱石灰玻片上制备硒化钴薄膜。采用x射线衍射、原子力显微镜和紫外可见分光光度计对薄膜进行了表征。AFM分析表明,在氨存在下制备的硒化钴薄膜均匀且完全覆盖了衬底的整个表面。XRD数据证实制备的薄膜(氨和三乙醇胺)为多晶,相发育良好。光学性质表明,所有薄膜的带隙值在1.8 ~ 2ev之间,适合用于太阳能电池。
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来源期刊
International Journal of Thin Film Science and Technology
International Journal of Thin Film Science and Technology Materials Science-Surfaces, Coatings and Films
CiteScore
1.60
自引率
0.00%
发文量
51
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