C. Kung, Hung-Yi Lin, Chin-Cheng Kuo, Cheng-Syuan Wu, Yu-Ting Chen, Meng-Wei Hsieh, Yu-Chang Hsieh, Pao-Nan Lee
{"title":"RF Devices Integrated by Fan-Out and System-In-Package Technology","authors":"C. Kung, Hung-Yi Lin, Chin-Cheng Kuo, Cheng-Syuan Wu, Yu-Ting Chen, Meng-Wei Hsieh, Yu-Chang Hsieh, Pao-Nan Lee","doi":"10.1109/IMPACT56280.2022.9966715","DOIUrl":null,"url":null,"abstract":"Higher performance and smaller form factor are always the critical subjects for mobile device in recent years. To meet this demand, System-In-Package (SiP) has become a certain path for innovation and an unstoppable trend for decade. In this study, the benefits of evolving SiP with organic substrate to Fan-Out SiP (FOSiP) for new generation mobile RF module with higher performance and smaller form factor has been illustrated. A designed and manufactured FOSiP module with 6 RF devices integrated by several core features and building blocks would be demonstrated, including chip-last RDL manufacturing, carrier system, wafer level assembly and shielding sputtering.","PeriodicalId":13517,"journal":{"name":"Impact","volume":"26 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Impact","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMPACT56280.2022.9966715","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Higher performance and smaller form factor are always the critical subjects for mobile device in recent years. To meet this demand, System-In-Package (SiP) has become a certain path for innovation and an unstoppable trend for decade. In this study, the benefits of evolving SiP with organic substrate to Fan-Out SiP (FOSiP) for new generation mobile RF module with higher performance and smaller form factor has been illustrated. A designed and manufactured FOSiP module with 6 RF devices integrated by several core features and building blocks would be demonstrated, including chip-last RDL manufacturing, carrier system, wafer level assembly and shielding sputtering.