D. Buldu, J. de Wild, T. Kohl, G. Birant, G. Brammertz, M. Meuris, J. Poortmans, B. Vermang
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引用次数: 0
Abstract
A new multi-stack approach with contact openings was investigated for front surface of Cu(In,Ga)Se2 thin film solar cells. In this multi-stack design, a thin HfOx layer was used to protect a thicker AlOx layer from the presence of ammonia in the chemical bath deposition. The contact openings were created by using alkali solution. The lifetime decay was improved by implementing multi-stack passivation layer between CIGS/buffer layer interface. It was shown that open circuit voltage was increased by up to 30mV.
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