T. Kodera, G. Yamahata, T. Kambara, K. Horibe, K. Uchida, C. Marcus, S. Oda
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引用次数: 1
Abstract
We realized lithographically-defined electrically-tunable silicon quantum dots (Si QDs) without unintentional localized potentials by improving device structures and fabrication techniques. Carrier density was tuned with a top gate and QD-potentials were controlled with the side gates. We succeeded in observing spin-related tunneling phenomena using the double QD device.
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