C. Russell, C. Wood, L. Dazhang, A. Burnett, L. Li, E. Linfield, A. Davies, J. Cunningham
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引用次数: 5
Abstract
We demonstrate an increase in bandwidth, from 600 GHz to 1.5 THz, of planar Goubau-line on-chip devices with integrated low-temperature-grown (LT) GaAs photoconductive (PC) switches, using a substrate-thinning technique. The effect of substrate thinning was investigated both experimentally and theoretically, and the increase in bandwidth then used for spectroscopy of overlaid polycrystalline materials.
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