T. Krajewski, P. Smertenko, G. Luka, L. Wachnicki, A. Cherevko, G. Olkhovik, A. Zakrzewski, M. Godlewski, E. Guziewicz
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引用次数: 0
Abstract
This paper reports on the Ag/HfO2/ZnO/TiAu Schottky structures, in which the semiconducting ZnO and HfO2 layers are obtained using the low temperature Atomic Layer Deposition (ALD) method. Basing on the thermionic emission, differential and injection approaches an optimal thickness of HfO2 capping layer for the ZnO-based diode was found to be about 2.5 nm.
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