C. Schmidt, O. Schubert, F. Junginger, S. Mahrlein, B. Mayer, A. Sell, R. Huber, A. Leitenstorfer
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引用次数: 2
Abstract
The influence of strong electric fields on electronic properties of semiconductors is of particular interest both for fundamental science and applications in high speed electronics. Investigations using large quasi-static [1] and THz [2] fields have been performed. However, the accessible field amplitudes have been limited to values typically below 1 MV/cm due to the dielectric breakdown under stationary bias and the availability of intense phase-stable THz sources, respectively.
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