V. Anishchik, V. A. Harushka, U. Pilipenka, V. Ponariadov, V. Saladukha, Jsc «Integral»
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引用次数: 1
Abstract
О б р а з е ц ц и т и р о в а н и я: Анищик ВМ, Горушко ВА, Пилипенко ВА, Понарядов ВВ, Солодуха ВА. Перераспределение примеси в ионно-легированных слоях при быстрой термообработке подзатворного диэлектрика. Журнал Белорусского государственного университета. Физика. 2019;2:48 –53. https://doi.org/10.33581/2520-2243-2019-2-48-53 F o r c i t a t i o n: Anishchik VM, Harushka VA, Pilipenka UA, Ponariadov VV, Saladukha VA. Redistribution of impurity in ion-doped layers during fast heat treatment of gate dielectric. Journal of the Belarusian State University. Physics. 2019;2:48 –53. Russian. https://doi.org/10.33581/2520-2243-2019-2-48-53
我和aniik vm, gorusko wah, pillipenko wah, soloius wah。离子合金层中的杂质重新分配，快速热处理隐藏介质。白俄罗斯州立大学日志。物理，2019,2:48 - 53。https://doi.org/10.33581/2520-2243-2019-2-48-53 F o r i c t a t i o n: Anishchik VM Harushka VA, Pilipenka UA Ponariadov一台VV Saladukha VA Redistribution of impurity in ion - doped layers during fast treatment of gate dielectric热度。贝鲁斯州立大学杂志。物理，2019,2:48 - 53。俄罗斯。https://doi.org/10.33581/2520-2243-2019-2-48-53
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