Low Temperature Conductivity Behaviour for Multilayered Thin Films

Abstract

By using electron beam gun and thermal evaporation techniques in the vacuum range 6 x10-5mbar (V.R. Technology Bangalore Make). The pure materials of 99.99% purity of Cobalt and aluminium multilayers films were produced on glass substrates at room temperature in the following multilayered [Co10A/AL10A]N where N= 1,3,6,9 and 12 labeled as ( CA1, CA2, CA3, CA4 and CA5). The low temperature (4.2K to 300K) resistance of these samples was measured by using four probe method at UGC-DAE Consortium Indore later resistivity and conductivity calculated and temperature co-efficient of resistance (TCR), residual resistivity ratio (RRR) and activation energy (Ea) were also calculated. The resistivity behavior shown that the resistivity is increased with increasing the n value it means it increased with increasing number of layers. The data belonging to metallic region has been analyzed using the conventional power law’s it is for the first time that a set of multilayered films in the present configurations have been explored for resistivity at low temperature.