E. Hamid, Juli Cha Tarido, Sakito Miki, T. Mizuno, D. Moraru, M. Tabe
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Abstract
We investigated single electron charging in few-dopant systems by experiment and simulation. Our simulation results are in good agreement with experimental results. This provides a strong support for understanding the physics of single electron charging in few-dopant systems for future single dopant memory device design rules.
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