V. P. Gordeev, V. A. Oleshchenko, V. V. Bezotosnyi
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引用次数: 0
Abstract
Comparative results are presented of 3D-calculation for thermoelastic stress (TES) profiles in diode laser arrays (LDAs) assembled on CuW and AlN submounts (temperature compensators) and operating at a continuous-wave (CW) thermal power load of up to 220 W. For the first time, the simulation has revealed substantial differences in the maximal TES values for the arrays assembled on CuW and AlN submounts, as well as pronounced features of TES distribution in LDA assemblies, in particular, near the rear (highly reflecting) mirror of the laser diode cavity in similar geometries of temperature compensators. Results of the numerical simulation qualitatively agree with thorough measurements of spectral distributions over the LDA emitting aperture. The obtained results are interesting for mastering the production technologies of high-power devices aimed at improving their output parameters and service life.
期刊介绍：
Quantum Electronics covers the following principal headings
Letters
Lasers
Active Media
Interaction of Laser Radiation with Matter
Laser Plasma
Nonlinear Optical Phenomena
Nanotechnologies
Quantum Electronic Devices
Optical Processing of Information
Fiber and Integrated Optics
Laser Applications in Technology and Metrology, Biology and Medicine.
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