Semiconductor disk laser with a wavelength of 780 nm based on a MOCVD-grown Al x Ga1–x As/Al y Ga1–y As heterostructure with optical and electron beam pumping

Abstract

A pulsed semiconductor disk laser based on the Al x Ga1 – x As/Al y Ga1 – y As structure with resonantly periodic gain and a built-in Bragg mirror emitting at a wavelength near 780 nm is studied. The laser characteristics are presented both for pumping by an electron beam and for optical pumping by laser diode radiation with a wavelength of 450 nm. Under pumping by an electron beam, a peak power of 4.4 W is achieved with a slope efficiency of over 10 %, while under optical pumping, the power is 0.2 W with a slope efficiency of 2.2 % and approximately the same cavity parameters. Possible reasons for the lower powers and efficiency under optical pumping are discussed.