Выявление и исследование 60-=SUP=-o-=/SUP=--поворотных доменов в α-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- методом просвечивающей электронной микроскопии

А.В. Мясоедов, Иван Сергеевич Павлов, А.И. Печников, В. И. Николаев
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Abstract

The conditions have been established for detection and recognition of rotation domains in α–Ga2O3/α–Al2O3 (0001) thin films in the presence of other polymorphs. The domains are visualized by high-resolution transmission electron microscopy. Their structural characteristics are determined by preparing cross-sectional and plan-view specimens, choosing the correct diffraction conditions and proper imaging modes. As a result, the dimensions, the spatial distribution, the volume fraction and area fraction of the inclusions of domains have been determined.
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60-=SUP -= -o-=/SUP -转域在-Ga- 2-= -2-= -o-= =SUB -3-= =SUB -3-= =SUB
在α-Ga2O3 / α-Al2O3(0001)薄膜中存在其他多晶时,建立了检测和识别旋转畴的条件。通过高分辨率透射电子显微镜观察这些结构域。通过制备截面和平面样品,选择正确的衍射条件和成像方式,确定了其结构特征。从而确定了畴内夹杂物的尺寸、空间分布、体积分数和面积分数。
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