{"title":"Enhanced hole mobility in non-(001) oriented sidewall corner of Si pMOSFETs formed on (001) substrate","authors":"Chih-Yu Hsu, Hua-Gang Chang, Shin-Jiun Kuang, Wei Lee, Yu‐Cheng Chen, Chien‐Chih Lee, Ming-Jer Chen","doi":"10.1109/SNW.2010.5562565","DOIUrl":null,"url":null,"abstract":"By means of the TEM images, the channel width of (001) silicon pMOSFETs is separated into the flat and rounded corner parts. The underlying stress distribution is obtained via a process simulation. Then, a systematic analysis of the measured drain current leads to a remarkable result: The hole mobility in the non-(001) corner is about two times higher than the (001) flat one, valid for all channel widths involved. This is due to the multi-facets around (110) and (111) orientations. The confirmative evidence is also presented: (i) the increased value of the parameter η in effective field to maintain the mobility universality and (ii) the low frequency noise measurement to ensure the corner gate oxide integrity. Therefore, the non-(001) p-channel sidewall corner formed on (001) substrate can constitute a promising narrow device.","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2010-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Silicon Nanoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2010.5562565","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
By means of the TEM images, the channel width of (001) silicon pMOSFETs is separated into the flat and rounded corner parts. The underlying stress distribution is obtained via a process simulation. Then, a systematic analysis of the measured drain current leads to a remarkable result: The hole mobility in the non-(001) corner is about two times higher than the (001) flat one, valid for all channel widths involved. This is due to the multi-facets around (110) and (111) orientations. The confirmative evidence is also presented: (i) the increased value of the parameter η in effective field to maintain the mobility universality and (ii) the low frequency noise measurement to ensure the corner gate oxide integrity. Therefore, the non-(001) p-channel sidewall corner formed on (001) substrate can constitute a promising narrow device.
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