{"title":"Mathematical modelling of kink effect in deep-submicron FDSOIMOSFET","authors":"S. Bhattacharya, P. Ray, J. Sanyal","doi":"10.1109/EDCT.2018.8405088","DOIUrl":null,"url":null,"abstract":"The kink effect has been observed in deep-submicron Fully Depleted Silicon-On-Insulator (FDSOI) MOSFETs and the corresponding devices have also been studied through physical modelling and simulation. The current work is an endeavour to put forward a mathematical model for the kink effect as observed in deep-submicron MOSFETs which is found to agree with the modelling and simulation results obtained by other researchers in the field.","PeriodicalId":6507,"journal":{"name":"2018 Emerging Trends in Electronic Devices and Computational Techniques (EDCT)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Emerging Trends in Electronic Devices and Computational Techniques (EDCT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDCT.2018.8405088","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The kink effect has been observed in deep-submicron Fully Depleted Silicon-On-Insulator (FDSOI) MOSFETs and the corresponding devices have also been studied through physical modelling and simulation. The current work is an endeavour to put forward a mathematical model for the kink effect as observed in deep-submicron MOSFETs which is found to agree with the modelling and simulation results obtained by other researchers in the field.
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