{"title":"Bismuth-containing GaAs Core–Shell Nanowires","authors":"M. Usman","doi":"10.1109/NUSOD52207.2021.9541470","DOIUrl":null,"url":null,"abstract":"This work theoretically investigates the electronic and optical properties of GaBixAs1−x/GaAs core−shell and GaAs/GaBixAs1−x/GaAs multi-core−shell nanowires. Our results show a large tuning of absorption wavelength (0.9 µ to 1.6 µ) by varying Bi composition and/or nanowire diameters. The computed polarisation dependent optical spectra indicate the possibility to incorporate such nanowires in photonic devices desiring isotropic polarisation response . Overall our work provides a systematic and detailed understanding of bismuth-containing GaAs nanowire optoelectronic properties which could offer new possibilities for future green photonic technologies.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"5 1","pages":"19-20"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD52207.2021.9541470","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This work theoretically investigates the electronic and optical properties of GaBixAs1−x/GaAs core−shell and GaAs/GaBixAs1−x/GaAs multi-core−shell nanowires. Our results show a large tuning of absorption wavelength (0.9 µ to 1.6 µ) by varying Bi composition and/or nanowire diameters. The computed polarisation dependent optical spectra indicate the possibility to incorporate such nanowires in photonic devices desiring isotropic polarisation response . Overall our work provides a systematic and detailed understanding of bismuth-containing GaAs nanowire optoelectronic properties which could offer new possibilities for future green photonic technologies.