{"title":"Long range pinning interaction in ultra-thin insulator-inserted metal/germanium junctions","authors":"T. Nishimura, K. Kita, K. Nagashio, A. Toriumi","doi":"10.1109/SNW.2010.5562590","DOIUrl":null,"url":null,"abstract":"In this paper, we discuss the Fermi Level Pinning (FLP) modulation at metal/germanium (Ge) interface by inserting ultra-thin insulator film. The FLP was alleviated gradually and continuously with increasing insulator (GeO2) thickness up to 2 nm. The results cannot be simply explained by the termination of dangling bonds or defects just at Ge interface. It is inferred that relatively long range (∼ 2 nm) interaction between metal and Ge might be involved in the FLP and its alleviation.","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":"333 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Silicon Nanoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2010.5562590","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
In this paper, we discuss the Fermi Level Pinning (FLP) modulation at metal/germanium (Ge) interface by inserting ultra-thin insulator film. The FLP was alleviated gradually and continuously with increasing insulator (GeO2) thickness up to 2 nm. The results cannot be simply explained by the termination of dangling bonds or defects just at Ge interface. It is inferred that relatively long range (∼ 2 nm) interaction between metal and Ge might be involved in the FLP and its alleviation.
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