A 2.6 mW Single-Ended Positive Feedback LNA for 5G Applications

S. Arshad, A. Beg, R. Ramzan
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Abstract

This paper presents the design of a single-ended positive feedback Common Gate (CG) Low Noise Amplifier (LNA) for 5G applications. Positive feedback is utilized to achieve the trade-off between the input matching, the gain and the noise factor (NF) of the LNA. The positive feedback inherently cancels the noise produced by the input CG transistor. The proposed LNA is designed and fabricated in 150 nm CMOS by L-Foundry. At 1.41 GHz, the measured S11 and S22 are better than -20 dB and -8.4 dB, respectively. The highest voltage gain is 16.17 dB with a NF of 3.64 dB. The complete chip has an area of 1 mm2. The LNA's power dissipation is only 2.6 mW with a 1 dB compression point of -13 dBm. The simple, low power and single-ended architecture of the proposed LNA allows it to be implemented in phase array and Multiple Input Multiple Output (MIMO) radars, which have limited input and output pads and constrained power budgets for on-board components.
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用于5G应用的2.6 mW单端正反馈LNA
本文介绍了一种用于5G应用的单端正反馈共门(CG)低噪声放大器(LNA)的设计。利用正反馈来实现LNA输入匹配、增益和噪声因子(NF)之间的权衡。正反馈固有地抵消了输入CG晶体管产生的噪声。LNA是由L-Foundry公司在150 nm CMOS上设计和制造的。在1.41 GHz时,测量到的S11和S22分别优于-20 dB和-8.4 dB。最高电压增益为16.17 dB, NF为3.64 dB。整个芯片的面积为1平方毫米。LNA的功耗仅为2.6 mW, 1db压缩点为-13 dBm。LNA的简单、低功耗和单端架构使其能够在相控阵和多输入多输出(MIMO)雷达中实现,这些雷达具有有限的输入和输出垫,并且限制了机载组件的功率预算。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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