Flash memory cells data loss caused by total ionizing dose and heavy ions

A. Petrov, A. Vasil'ev, A. Ulanova, A. Chumakov, A. Nikiforov
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引用次数: 28

Abstract

The paper provides experimental results of flash memory loss data investigation. Possible mechanisms of charge loss from storage element are reviewed. We provide some guidelines for flash memory evaluation to space application.
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总电离剂量和重离子引起的闪存细胞数据丢失
本文提供了闪存丢失数据调查的实验结果。综述了存储元件电荷损失的可能机理。本文为快闪存储器的空间应用评价提供了一些参考。
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来源期刊
Central European Journal of Physics
Central European Journal of Physics 物理-物理:综合
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