Technological features of the method of liquid-phase epitaxy when growing InP/GaInAsP heterostructures

M. G. Vasil’ev, A. M. Vasil’ev, A. D. Izotov, Yu. O. Kostin, A. Shelyakin
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引用次数: 1

Abstract

Semiconductor devices of quantum electronics based on InP/GaInAsP heterostructures require the creation of non-defective chips for emitting devices and photodetectors. The production of such chips is impossible without a thorough technological study of the growth processes of epitaxial structures. One of the important problems in relation to the growth of such structures is the growth defects associated with the process of dissociation of indium phosphide on the surface during their growth. The aim of the work was the investigation of the process and mechanism of destruction (dissociation) of the surface of indium phosphide substrates in the range of growth temperatures of structures, as well as the study of methods andtechniques that allow minimize the process of dissociation of surface of indium phosphide.The work provides studies of the growth processes of InP/GaInAsP heterostructures, from the liquid phase, taking into account the degradation processes of the growth surface and the mechanisms for the formation of dissociation defects.The schemes of the dissociation process of the InP on the surface of the substrate and the formation of the defective surface of the substrate were analysed. At the same time, technological methods allowing to minimize the dissociation of the surface compound during the process of liquid-phase epitaxy were shown. The original design of a graphite cassette allowing to minimize the dissociation of the indium phosphide substrate in the process of liquid-phase epitaxy was proposed
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液相外延法生长InP/GaInAsP异质结构的工艺特点
基于InP/GaInAsP异质结构的量子电子半导体器件要求为发射器件和光电探测器制造无缺陷芯片。如果没有对外延结构的生长过程进行彻底的技术研究,这种芯片的生产是不可能的。与这种结构的生长有关的一个重要问题是在其生长过程中与表面磷化铟解离过程相关的生长缺陷。本工作的目的是研究在结构生长温度范围内磷化铟衬底表面破坏(解离)的过程和机制,以及研究使磷化铟表面解离过程最小化的方法和技术。本文从液相角度研究了InP/GaInAsP异质结构的生长过程,考虑了生长表面的降解过程和解离缺陷的形成机制。分析了InP在衬底表面的解离过程和衬底缺陷表面的形成方案。同时,给出了液相外延过程中使表面化合物解离最小化的技术方法。提出了一种使磷化铟衬底在液相外延过程中解离最小化的石墨盒的原始设计
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